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 RB706D-40
Diodes
Schottky barrier diode
RB706D-40
Applications Low current rectification External dimensions (Unit : mm) Land size figure (Unit : mm)
1.9
2.90.2 Each lead has same dimension 0.15 0.06 (3)
2.80.2
1.60.1
Features 1) Small mold type. (SMD3) 2) Low IR 3) High reliability.
0.4 0.1
0.05
0.2
1.0MIN.
0.95
0.8MIN.
00.1 0.30.6
(2) 0.95 0.95 1.90.2
(1)
0.80.1 1.10.2 0.01
Structure
Construction Silicon epitaxial planar
ROHM : SMD3 JEDEC :S0T-346 JEITA : SC-59 week code
Taping specifications(Unit : mm)
4.00.1 2.00.05 1.50.1 0 1.750.1 0.30.1
3.50.05
8.00.2
3.20.1
3.20.1
4.00.1
1.05MIN
00.5
5.50.2
3.20.1
1.350.1
Absolute maximum ratings (Ta=25C)
Parameter Reverse voltage (repetitive peak) Reverse voltage (DC) Average rectified forward current (*1) Forward current surge peak 60Hz1cyc (*1) Junction temperature Storage temperature (*1) Rating of per diode : Io/2 Symbol VRM VR Io IFSM Tj Tstg Limits 45 40 30 200 125 -40 to +125 Unit V V mA mA
Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 IR1 Ct1 Min. Typ. 2.0 Max. 0.37 1 Unit V A pF Conditions IF=1mA VR=10V VR=1V , f=1MHz
2.4
0.1
Rev.B
1/3
RB706D-40
Diodes
Electrical characteristic curves (Ta=25C)
100 Ta=125
FORWARD CURRENT:IF(mA) REVERSE CURRENT:IR(uA)
1000 Ta=125
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
10 f=1MHz
100 10 1 0.1 0.01 0.001 0 10 20 30 Ta=75 Ta=25
10 Ta=75 1 Ta=-25 0.1 Ta=25
1
Ta=-25
0.01
0 100 200 300 400 500 600 700 800 900 1000
0.1 0 10 20 30 REVERSE VOLTAGE:VR(V) VR-Ct CHARACTERISTICS
FORWARD VOLTAGEVF(mV) VF-IF CHARACTERISTICS
REVERSE VOLTAGEVR(V) VR-IR CHARACTERISTICS
300
FORWARD VOLTAGE:VF(mV) REVERSE CURRENT:IR(nA)
1 Ta=25 IF=1mA n=30pcs 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 AVE:0.083nA Ta=25 VR=10V n=30pcs
10 9
CAPACITANCE BETWEEN TERMINALS:Ct(pF)
290 280 270 260 AVE:267.4mV 250
8 7 6 5 4 3 2 1 0 AVE:2.52pF
Ta=25 f=1MHz VR=0V n=10pcs
VF DIPERSION MAP
IR DISPERSION MAP
Ct DISPERSION MAP
20
PEAK SURGE FORWARD CURRENT:IFSM(A)
20
PEAK SURGE FORWARD CURRENT:IFSM(A) PEAK SURGE FORWARD CURRENT:IFSM(A)
10 Ifsm 8.3ms 8.3ms 1cyc 9 8 7 6 5 4 3 2 1 Ifsm t
Ifsm 15
1cyc 8.3ms
15
10
10
5 AVE:7.30A 0
5
0 1 IFSM DISPERSION MAP 10 NUMBER OF CYCLES IFSM-CYCLE CHARACTERISTICS 100
0 1 10 TIME:t(ms) IFSM-t CHARACTERISTICS 100
1000
TRANSIENT THAERMAL IMPEDANCE:Rth (/W)
0.04 Rth(j-a)
REVERSE POWER DISSIPATION:PR (W) FORWARD POWER DISSIPATION:Pf(W)
0.003
0.03
D=1/2
100 Rth(j-c)
Mounted on epoxy board
0.002 D=1/2 DC 0.001 Sin(180)
Sin(180) 0.02
10
IM=1mA
IF=10mA
0.01
DC
1ms
time
300us
1 0.001
0.00 0.1 10 TIME:t(s) Rth-t CHARACTERISTICS 1000 0.00 0.01 0.02 0.03 0.04 0.05
0 0 10 20 30
AVERAGE RECTIFIED FORWARD CURRENT Io(A) Io-Pf CHARACTERISTICS
REVERSE VOLTAGE:VR(V) VR-PR CHARACTERISTICS
Rev.B
2/3
RB706D-40
Diodes
0.1 Per chip 0.1
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0.08 0.06 0.04 0.02 0 0 25 50
AVERAGE RECTIFIED FORWARD CURRENT:Io(A)
0A 0V
Io t T VR D=t/T VR=20V Tj=125
Per chip 0.08 0.06 0.04 0.02 Sin(180) 0 0 25 50 75 100 CASE TEMPARATURE:Tc() Derating Curve(Io-Tc) 125 0A 0V DC D=1/2 Io t T VR D=t/T VR=20V Tj=125
DC D=1/2
Sin(180)
75
100
125
AMBIENT TEMPERATURE:Ta() Derating Curve(Io-Ta)
Rev.B
3/3
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.1


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